Breakthrough: Triple-Junction Perovskite-Silicon Solar Cell Hits 24.4%

• Breakthrough triple-junction solar cell achieves record 24.4% efficiency, showcasing innovative light management and high-performance perovskite technology.

Researchers at the Karlsruhe Institute of Technology, Institute for Solar Energy Research Hamelin, and Leibniz University Hannover have developed a triple-junction perovskite–perovskite–silicon solar cell with a record power conversion efficiency of 24.4%. By optimizing the light management of each perovskite sub-cell, the team achieved a high open-circuit voltage of 2.84 V and a current generation of 11.6 mA cm−2. The middle perovskite sub-cell played a crucial role in this achievement, as it needed to withstand the subsequent processing of the wide-bandgap perovskite top cell.

The triple-junction cell, based on perovskite top and middle cells with bandgaps of 1.84 eV and 1.52 eV respectively, along with a silicon bottom cell with a bandgap of 1.1 eV, achieved a power conversion efficiency of 24.4%. The cell also retained 96.6% of its initial efficiency after dark storage aging at 85°C for 1,081 hours. The researchers used a combination of sputtered nickel(II) oxide and carbazole as a double hole transport layer in both perovskite sub-cells, which contributed to excellent charge carrier extraction and device yield.

Overall, the development of this triple-junction solar cell represents a significant advancement in multi-junction perovskite-based photovoltaics, overcoming challenges in processing high-quality perovskite thin films and achieving high efficiency levels. The researchers' innovative approach and optimization techniques have led to a new milestone in the field of solar cell technology.

What is the record power conversion efficiency of the triple-junction perovskite-silicon solar cell?

• The record power conversion efficiency of the triple-junction perovskite-silicon solar cell is 24.4%.
• The cell achieved a high open-circuit voltage of 2.84 V and a current generation of 11.6 mA cm−2.
• The middle perovskite sub-cell played a crucial role in achieving the high efficiency, as it needed to withstand the subsequent processing of the wide-bandgap perovskite top cell.
• The triple-junction cell is based on perovskite top and middle cells with bandgaps of 1.84 eV and 1.52 eV respectively, along with a silicon bottom cell with a bandgap of 1.1 eV.
• The cell retained 96.6% of its initial efficiency after dark storage aging at 85°C for 1,081 hours.
• The researchers used a combination of sputtered nickel(II) oxide and carbazole as a double hole transport layer in both perovskite sub-cells, contributing to excellent charge carrier extraction and device yield.