Researchers show low-temperature and also reliable ex situ group V doping of polycrystalline solar cells

Jul 14, 2021 12:00 PM ET
  • In recent times, designers have created a selection of solar modern technologies using various types of products. These include solar cells based on cadmium telluride (CdTe), a steady crystalline semiconducting substance consisted of cadmium and tellurium.
Researchers show low-temperature and also reliable ex situ group V doping of polycrystalline solar cells
Image: Li et al

CdTe-based solar cells can frequently produce electricity at a relative low cost. These cells typically take advantage of numerous procedures, consisting of fast CdTe absorber deposition, CdCl2 therapy and also copper (Cu) doping.

Doping is the process where pollutants are presented into a semiconductor to modulate some of its residential properties. As recommended by its name, Cu doping happens when a product is doped using copper. While lots of CdTe-based solar cells undergo Cu doping, this procedure can often cause low photovoltage and also electric instability.

To overcome the recognized restrictions of Cu doping, some designers have been attempting to dope CdTe making use of group V components rather. Numerous high-temperature, sitting group V-doped CdSeTe solar gadgets accomplished rewarding outcomes, for example exhibiting performances above 20%. However, these devices can likewise have their very own limitations and difficulties.

Researchers at University of Toledo as well as University of Alabama have actually just recently recognized the low-temperature and also effective ex situ group V doping of CdSeTe solar cells. Their paper, published in Nature Energy, could pave the way towards the growth of far better doing group V-doped CdSeTe solar innovations.

" Although high-temperature sitting groupV doped CdSeTe gadgets have demonstrated effectiveness exceeding 20%, they encounter challenges including post-deposition doping activation processes, brief service provider lifetimes as well as low activation proportions," the researchers that executed the research wrote in their paper. "We show low-temperature as well as efficient ex situ group V doping for CdSeTe solar cells utilizing group V chlorides."

Essentially, Deng-Bing Li and also his colleagues at University of Toledo and also University of Alabama doped their CdSeTe solar cells using a series of group V very ionic materials, namely group V chlorides. These chlorides included PCl3, AsCl3, SbCl3 as well as BiCl3.

The solar cells produced by the scientists accomplished exceptional results, in regards to performances, service provider life times and dopant activation ratios. In addition, they compared really favorably with existing Cu-doped CdTe-based solar cells.

" For AsCl3 doped CdSeTe solar cells, the dopant activation ratio can be 5.88%, hole densities get to > 2x1015cm-3 as well as carrier life time is longer than 20ns," the researchers wrote in their paper. "Therefore, ex situ As doped CdSeTe solar cells reveal open-circuit voltages of -863 mV, contrasted to the highest possible open-circuit voltage of 852mV for Cu doped CdSeTe solar cells."

The group V diffusion doping procedure that this team of researchers put on their solar cells is affordable as well as can be executed at low temperature levels. In addition, it closely appears like more traditional Cu doping processes, hence it must be very easy to implement across existing solar cell production facilities.

In the future, the current paper published in Nature Energy might inspire other study teams worldwide to design and also assess similar group V doping approaches. Inevitably, it might therefore assist the development of a variety of affordable and highly effective CdTe-based solar cells.

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