Non-Volatile Memory Breakthrough: Layered Nickelate

• Researchers from Tohoku University and University of Tsukuba in Japan have made a breakthrough in developing a non-volatile phase change memory using a nickelate material. Discover the potential advantages of this material with improved performance, sustainability and lower costs.

Researchers from Tohoku University and University of Tsukuba in Japan have made a breakthrough in developing non-volatile phase change memory using a perovskite-derivative nickelate material. Until now, phase change memory has primarily been developed using chalcogenides, but the new material exhibits thermally reversible switching of room temperature electrical resistivity. This has the potential to provide better performance and superior sustainability compared to chalcogenides, with advantages such as lower costs and improved sustainability. The study also revealed the mechanisms behind the reversible switching of room temperature electrical resistivity, which could have far-reaching applications.

Can Nickelate Material Outperform Chalcogenides in Phase Change Memory?

• Since their discovery, chalcogenides have been the most widely used material in phase change memory due to their ability to switch between a high and low resistance state.
• Nickelate material has the potential to outperform chalcogenides in phase change memory due to its thermally reversible switching of room temperature electrical resistivity.
• The use of nickelate material in phase change memory could enable lower cost production with improved sustainability features.
• The study revealed the mechanisms behind the reversible switching of room temperature electrical resistivity, which could lead to a wide range of applications.

The new nickelate material could have implications for next-generation data storage devices, as well as for the development of more efficient computing systems.