Dipanwita Dutta
Swiss scientists identify causes of defects in silicon carbides for power electronics
Carbon clusters of a few nanometers in size could be responsible for the defects affecting the thermal stability of SiCs. The defective carbon accumulations arise during the oxidation of silicon carbide to silicon dioxide under high temperatures
Sep 13, 2019 // Technology, Inverters, Europe, Switzerland, carbon, Dipanwita Dutta
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