CREE
New 650 V MOSFET for silicon carbide inverters
CREE has actually created a brand-new MOSFET that could be appropriate for silicon-carbide-based string inverters over 10 kW in dimension. The U.S. producer states changing losses are 20% reduced with the brand-new transistor than with silicon carbide MOSFETs, and also declares that the item minimizes transmission losses by 50%, to use prospective power-density development of 300%.
May 26, 2020 // Inverters, USA, North America, MOSFET, CREE, John Palmour
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