What is P-I-N?
A PV device structure that contains a layer of intrinsic semiconductor sandwiched between an n-type and a p-type semiconductor layers. Commonly used in amorphous silicon solar devices.
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A PV device structure that contains a layer of intrinsic semiconductor sandwiched between an n-type and a p-type semiconductor layers. Commonly used in amorphous silicon solar devices.
← Back to Solar Energy Glossary